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DMN4800LSSL Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN4800LSSL Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 6 page  DMN4800LSSL Document number: DS35016 Rev. 3 - 2 1 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID max TA = 25°C 30V 14m Ω @ VGS = 10V 8.0A 20m Ω @ VGS = 4.5V 6.7A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions Features and Benefits • 14m Ω @ VGS = 10V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMN4800LSSL-13 SO-8 2500/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View Top View Internal Schematic S D D G D D S S Top View Logo Part no. Year: “09” = 2009 Week: 01 ~ 53 1 4 8 5 N4800LS YY WW SO-8 |
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