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M68ICS08GR Datasheet(PDF) 385 Page - Freescale Semiconductor, Inc |
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M68ICS08GR Datasheet(HTML) 385 Page - Freescale Semiconductor, Inc |
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385 / 408 page  Electrical Specifications Memory Characteristics MC68HC908GR8 — Rev 4.0 Technical Data MOTOROLA Electrical Specifications 385 23.17 Memory Characteristics Characteristic Symbol Min Typ Max Unit RAM data retention voltage VRDR 1.3 —— V FLASH program bus clock frequency — 1 —— MHz FLASH read bus clock frequency fRead (1) 1. fRead is defined as the frequency range for which the FLASH memory can be read. 32k — 8.4M Hz FLASH page erase time tErase (2) 2. If the page erase time is longer than tErase (Min), there is no erase-disturb, but it reduces the endurance of the FLASH memory. 1 —— ms FLASH mass erase time tMErase (3) 3. If the mass erase time is longer than tMErase (Min), there is no erase-disturb, but it reduces the endurance of the FLASH memory. 4 —— ms FLASH PGM/ERASE to HVEN set up time tnvs 10 —— µs FLASH high-voltage hold time tnvh 5 —— µs FLASH high-voltage hold time (mass erase) tnvhl 100 —— µs FLASH program hold time tpgs 5 —— µs FLASH program time tPROG 30 — 40 µs FLASH return to read time trcv (4) 4. trcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing HVEN to logic 0. 1 —— µs FLASH cumulative program HV period tHV (5) 5. tHV is defined as the cumulative high voltage programming time to the same row before next erase. tHV must satisfy this condition: tnvs + tnvh + tpgs + (tPROG × 64) ≤ tHV max. —— 4ms FLASH row erase endurance(6) 6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase / program cycles. — 10k 100k(7) 7. FLASH endurance is a function of the temperature at which erasure occurs. Typical endurance degrades when the tem- perature while erasing is less than 25 °C. — Cycles FLASH row program endurance(8) 8. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase / program cycles. — 10k 100k(7) — Cycles FLASH data retention time(9) 9. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified. — 10 100(10) 10. Motorola performs reliability testing for data retention. These tests are based on samples tested at elevated temperatures. Due to the higher activation energy of the elevated test temperature, calculated life tests correspond to more than 100 years of operation/storage at 55 °C — Years Notes: Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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