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PMEG6002EB115 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PMEG6002EB115
Description  Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages
PDF  10 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMEG6002EB115 Datasheet(HTML) 5 Page - NXP Semiconductors

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PMEG6002EB_PMEG6002TV_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 24 November 2006
5 of 10
NXP Semiconductors
PMEG6002EB; PMEG6002TV
0.2 A very low VF MEGA Schottky barrier rectifiers
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85 °C
(4) Tamb =25 °C
(5) Tamb = −40 °C
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85 °C
(4) Tamb =25 °C
(5) Tamb = −40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; Tamb =25 °C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
006aaa765
1
10
102
103
IF
(mA)
10−1
VF (V)
0
1.0
0.8
0.4
0.6
0.2
(1)
(2)
(3)
(4)
(5)
006aaa766
105
IR
(
µA)
10−3
10−2
10−1
1
10
102
103
104
VR (V)
060
40
20
(1)
(2)
(3)
(4)
(5)
VR (V)
060
40
20
006aaa767
10
20
30
Cd
(pF)
0



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