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PMEG6002EB115 Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMEG6002EB115 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 10 page ![]() 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages. 1.2 Features I Forward current: IF ≤ 0.2 A I Reverse voltage: VR ≤ 60 V I Very low forward voltage I Ultra small and flat lead SMD plastic packages 1.3 Applications I Low voltage rectification I High efficiency DC-to-DC conversion I Switch mode power supply I Reverse polarity protection I Low power consumption applications 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. PMEG6002EB; PMEG6002TV 0.2 A very low VF MEGA Schottky barrier rectifiers Rev. 01 — 24 November 2006 Product data sheet Table 1. Product overview Type number Package Configuration NXP JEITA PMEG6002EB SOD523 SC-79 single PMEG6002TV SOT666 - dual isolated Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current Tamb ≤ 25 °C - - 0.2 A VR reverse voltage - - 60 V VF forward voltage IF = 200 mA [1] - 540 600 mV |
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