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PMEG6002EB115 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PMEG6002EB115
Description  Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages
PDF  10 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMEG6002EB115 Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in ultra small and flat lead
Surface-Mounted Device (SMD) plastic packages.
1.2 Features
I Forward current: IF ≤ 0.2 A
I Reverse voltage: VR ≤ 60 V
I Very low forward voltage
I Ultra small and flat lead SMD plastic packages
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch mode power supply
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
PMEG6002EB; PMEG6002TV
0.2 A very low VF MEGA Schottky barrier rectifiers
Rev. 01 — 24 November 2006
Product data sheet
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
PMEG6002EB
SOD523
SC-79
single
PMEG6002TV
SOT666
-
dual isolated
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
IF
forward current
Tamb ≤ 25 °C
-
-
0.2
A
VR
reverse voltage
-
-
60
V
VF
forward voltage
IF = 200 mA
[1] -
540
600
mV


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