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STF10NM50N Datasheet(PDF) 1 Page - STMicroelectronics |
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STF10NM50N Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() October 2011 Doc ID 16929 Rev 3 1/18 18 STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STD10NM50N 550 V < 0.63 Ω 7 A STF10NM50N STP10NM50N 1 2 3 TO-220FP TO-220 DPAK 1 2 3 TAB 1 3 TAB Table 1. Device summary Order codes Marking Packages Packaging STD10NM50N 10NM50N DPAK Tape and reel STF10NM50N TO-220FP Tube STP10NM50N TO-220 www.st.com |
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