STF10NM50N datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STF10NM50N

Description	N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™II Power MOSFET

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 18 page

STD10NM50N, STF10NM50N, STP10NM50N

Electrical characteristics

Doc ID 16929 Rev 3

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 250 V, ID = 3.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 17)

7.8

4.4

7.8

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 7 A, VGS = 0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 22)

177

1.4

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

216

1.7

15.4

µC

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