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STP52N25M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP52N25M5
Description  N-channel 250 V, 0.055 廓, 28 A, TO-220 MDmeshTM V Power MOSFET
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP52N25M5 Datasheet(HTML) 3 Page - STMicroelectronics

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STP52N25M5
Electrical ratings
Doc ID 17776 Rev 1
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
25
V
ID
Drain current (continuous) at TC = 25 °C
28
A
ID
Drain current (continuous) at TC = 100 °C
18
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
112
A
PTOT
Total dissipation at TC = 25 °C
110
W
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
10
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
230
mJ
dv/dt(2)
2.
ISD ≤ 28 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
1.14
°C/W
Rthj-amb
Thermal resistance junction-pcb max
62.5
°C/W
TJ
Maximum lead temperature for soldering purpose
300
°C/W



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