STP52N25M5 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Electrical characteristics

STP52N25M5

4/12

Doc ID 17776 Rev 1

Electrical characteristics

(Tcase =25°C unless otherwise specified).

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

250

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 14 A

0.055

0.065

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

1770

110

Co(er)

(1)

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent output

capacitance energy

VGS = 0, VDS = 0 to 80%

V(BR)DSS

-93-

Co(tr)

(2)

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent output

capacitance time

VGS = 0, VDS = 0 to 80%

V(BR)DSS

-178

Gate input resistance

f=1 MHz open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 200 V, ID = 28 A,

VGS = 10 V

(see Figure 14)

STP52N25M5 Datasheet(PDF) 4 Page - STMicroelectronics

STP52N25M5 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL