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JS28F128P30TF75A Datasheet(PDF) 58 Page - Micron Technology

Part # JS28F128P30TF75A
Description  Numonyx Axcell P30-65nm Flash Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

JS28F128P30TF75A Datasheet(HTML) 58 Page - Micron Technology

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P30-65nm SBC
Datasheet
Apr 2010
58
Order Number: 208033-02
15.5
Program and Erase Characteristics
Table 27: Program and Erase Specifications
Num
Symbol
Parameter
VPPL
VPPH
Unit
Notes
Min
Typ
Max
Min
Typ
Max
Conventional Word Programming
W200
tPROG/W
Program
Time
Single word
-
40
175
-
40
175
µs
1
Buffered Programming
W250
tPROG/Buffer
Program
Time
Aligned 16-Wd, BP time
(32 Byte)
-
70
200
-
70
200
µs
1
Aligned 32-Wd, BP time
(64 Byte)
-
85
200
-
85
200
one full buffer (256
Words)
-
284
1280
-
160
800
Buffered Enhanced Factory Programming
W451
tBEFP/B
Program
Single byte
n/a
n/a
n/a
-
0.31
-
µs
1,2
W452
tBEFP/Setup
BEFP Setup
n/a
n/a
n/a
10
-
-
1
Erase and Suspend
W501
tERS/B
Erase Time
128-KByte Array Block
-
0.5
4
0.5
4
s
1
32-KByte Parameter
Block
-
0.4
2.5
-
0.4
2.5
W600
tSUSP/P
Suspend
Latency
Program suspend
-
20
25
-
20
25
µs
W601
tSUSP/E
Erase suspend
-
20
25
-
20
25
W602
tERS/SUSP
Erase to Suspend
-
500
-
-
500
-
1,3
Blank Check
W702
tBC/AB
blank
check
Array Block
-
3.2
-
-
3.2
-
ms
Notes:
1.
Typical values measured at TC = +25°C and nominal voltages. Performance numbers are valid for all speed versions.
Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.



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