MBRF10150CT datasheet(1/2 Pages) TGS

Part #	MBRF10150CT

Description	TO-220F Plastic-Encapsulate Diodes

PDF	2 Pages

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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1 / 2 page

TO-220F Plastic-Encapsulate Diodes

MBR

F10150CT SCHOTTKY BARRIER RECTIFIER

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

VRRM

Peak repetitive reverse voltage

VRWM

Working peak reverse voltage

VR

DC blocking voltage

150

V

VR(RMS)

RMS reverse voltage

105

V

IO

Average rectified output current

10

A

IFSM

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

A

PD

Power dissipation

2

W

RΘJA

Thermal resistance from junction to ambient

50

℃/W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

V(BR)

IR=0.1mA

150

V

Reverse current

IR

VR=150V

0.2

mA

Forward voltage

VF

IF=5A

0.85

V

Typical total capacitance

Ctot

VR=5V,f=1MHz

500

pF

TO-220F

1. ANODE

2. CATHODE

3. ANODE

A,Jun,2011

TIGER ELECTRONIC CO.,LTD

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