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STFI130N10F3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STFI130N10F3
Description  N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages
PDF  23 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI130N10F3 Datasheet(HTML) 3 Page - STMicroelectronics

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STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3
Electrical ratings
Doc ID 018492 Rev 3
3/23
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP
I²PAKFP
H²PAK-2
TO-220
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package.
Drain current (continuous) at TC = 25°C
46
120
A
ID
(1)
Drain current (continuous) at TC=100°C
29
78
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
184
450
A
PTOT
Total dissipation at TC = 25°C
35
250
W
dv/dt
Peak diode recovery voltage slope
22
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink (t = 1
s; TC = 25 °C)
2500
V
EAS
(3)
3.
Starting Tj = 25 °C, ID = 50 A, VDD = 50 V for TO-220 and H
2PAK-2; Starting Tj = 25 °C, I
D = 29 A,
VDD = 60 V for I
2PAKFP and TO-220FP.
Single pulse avalanche energy
125
mJ
Tj
Tstg
Operating junction temperature
storage temperature
- 55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
I²PAKFP
H²PAK-2
TO-220
Rthj-case
Thermal resistance junction-case
4.3
0.6
0.6
°C/W
Rthj-a
Thermal resistance junction-ambient
62.5
62.5
°C/W
Rthj-pcb(1)
1.
When mounted on FR-4 board, on 1inch², 2oz Cu.
Thermal resistance junction-pcb
35
°C/W



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