STFI130N10F3 datasheet(4/23 Pages) STMICROELECTRONICS

Part #	STFI130N10F3

Description	N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages

PDF	23 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 23 page

Electrical characteristics

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3

4/23

Doc ID 018492 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 250 µA

100

IDSS

Zero gate voltage drain

current

VGS = 0, VDS= 100 V

TC=25°C

TC=125°C

-10

100

µA

IGSS

Gate body leakage current VDS = 0, VGS = ±20 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 23A

TO-220FP and I²PAKFP

89.6

VGS= 10 V, ID= 60 A

H²PAK

TO-220

7.8

9.3

9.6

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 25 V,

f = 1 MHz

3305

373

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 50 V, ID = 120 A,

VGS = 10 V

(see Figure 20)

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 19,

Figure 24)

7.2

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