2–1

MRW3001 MRW3003 MRW3005

MOTOROLA RF DEVICE DATA

The RF Line

Microwave Power Transistors

. . . designed primarily for large–signal output and driver amplifier stages in the

1.5 to 3.0 GHz frequency range.

• Designed for Class B or C, Common Base Linear Power Amplifiers

• Specified 28 Volt, 3.0 GHz Characteristics:

Output Power — 1.0 to 5.0 Watts

Power Gain — 5.0 to 7.0 dB Min

Collector Efficiency — 30% Min

• Gold Metallization for Improved Reliability

• Diffused Ballast Resistors

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

3001

3003

3005

Unit

Collector–Base Voltage

VCBO

45

Vdc

Emitter–Base Voltage

VEBO

3.5

Vdc

Operating Junction Temperature

TJ

200

°C

Storage Temperature Range

Tstg

– 65 to + 200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, RF,

Junction to Case

R

θJC

35

17

8.5

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mA, VBE = 0)

MRW3001

(IC = 30 mA, VBE = 0)

MRW3003

(IC = 50 mA, VBE = 0)

MRW3005

V(BR)CES

50

50

50

—

—

—

—

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 1.0 mA, IE = 0)

MRW3001

(IC = 3.0 mA, IE = 0)

MRW3003

(IC = 5.0 mA, IE = 0)

MRW3005

V(BR)CBO

45

45

45

—

—

—

—

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 1.0 mA, IC = 0)

V(BR)EBO

3.5

—

—

Vdc

Collector Cutoff Current

MRW3001

(VCB = 28 V, IE = 0)

MRW3003

MRW3005

ICBO

—

—

—

—

—

—

0.5

0.75

1.25

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 5.0 V)

MRW3001

(IC = 300 mA, VCE = 5.0 V)

MRW3003

(IC = 500 mA, VCE = 5.0 V)

MRW3005

hFE

10

10

10

—

—

—

120

120

120

—

(continued)

Order this document

by MRW3001/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRW3001

MRW3003

MRW3005

5.0 – 7.0 dB

1.5 – 3.0 GHz

1.0 – 5.0 WATTS

MICROWAVE

POWER TRANSISTORS

CASE 328A–03, STYLE 1

(GP–13)

MRW3001, 3003, 3005

REV 6