BZT52C2V4LP - BZT52C39LP

Document number: DS30506 Rev. 18 - 2

2 of 5

www.diodes.com

September 2011

© Diodes Incorporated

BZT52C2V4LP - BZT52C39LP

Characteristic

Symbol

Value

Unit

Forward Voltage (Note 4)

0.9

V

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation

250

mW

Thermal Resistance, Junction to Ambient Air

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Type

Number

Marking

Code

Zener Voltage Range

(Note 4)

Maximum Zener Impedance

f = 1kHz

Maximum

Reverse

Current

(Note 4)

Typical

Temperature

Coefficient

mV/

°C

Test

Current

Nom (V)

Min (V)

Max (V)

mA

Ω

mA

uA

V

Min

Max

mA

BZT52C2V4LP

WX

2.4

2.20

2.60

5

100

600

1.0

50

1.0

-3.5

0

5

BZT52C2V7LP

W1

2.7

2.5

2.9

5

100

600

1.0

20

1.0

-3.5

0

5

BZT52C3V0LP

W2

3.0

2.8

3.2

5

95

600

1.0

10

1.0

-3.5

0

5

BZT52C3V3LP

W3

3.3

3.1

3.5

5

95

600

1.0

5

1.0

-3.5

0

5

BZT52C3V6LP

W4

3.6

3.4

3.8

5

90

600

1.0

5

1.0

-3.5

0

5

BZT52C3V9LP

W5

3.9

3.7

4.1

5

90

600

1.0

3

1.0

-3.5

0

5

BZT52C4V3LP

W6

4.3

4.0

4.6

5

90

600

1.0

3

1.0

-3.5

0

5

BZT52C4V7LP

W7

4.7

4.4

5.0

5

80

500

1.0

3

2.0

-3.5

0.2

5

BZT52C5V1LP

9Y

5.1

4.8

5.4

5

60

480

1.0

2.0

2.0

-2.7

1.2

5

BZT52C5V6LP

9A

5.6

5.2

6.0

5

40

400

1.0

1.0

2.0

-2

2.5

5

BZT52C6V2LP

9B

6.2

5.8

6.6

5

10

150

1.0

3.0

4.0

0.4

3.7

5

BZT52C6V8LP

9C

6.8

6.4

7.2

5

15

80

1.0

2.0

4.0

1.2

4.5

5

BZT52C7V5LP

9D

7.5

7.0

7.9

5

15

80

1.0

1.0

5.0

2.5

5.3

5

BZT52C8V2LP

9E

8.2

7.7

8.7

5

15

80

1.0

0.7

5.0

3.2

6.2

5

BZT52C9V1LP

9F

9.1

8.5

9.6

5

15

100

1.0

0.5

6.0

3.8

7.0

5

BZT52C10LP

9G

10

9.4

10.6

5

20

150

1.0

0.2

7.0

4.5

8.0

5

BZT52C11LP

9H

11

10.4

11.6

5

20

150

1.0

0.1

8.0

5.4

9.0

5

BZT52C12LP

9J

12

11.4

12.7

5

25

150

1.0

0.1

8.0

6.0

10.0

5

BZT52C13LP

9K

13

12.4

14.1

5

30

170

1.0

0.1

8.0

7.0

11.0

5

BZT52C15LP

9L

15

13.8

15.6

5

30

200

1.0

0.1

10.5

9.2

13.0

5

BZT52C16LP

9M

16

15.3

17.1

5

40

200

1.0

0.1

11.2

10.4

14.0

5

BZT52C18LP

9N

18

16.8

19.1

5

45

225

1.0

0.1

12.6

12.4

16.0

5

BZT52C20LP

9P

20

18.8

21.2

5

55

225

1.0

0.1

14.0

14.4

18.0

5

BZT52C22LP

9R

22

20.8

23.3

5

55

250

1.0

0.1

15.4

16.4

20.0

5

BZT52C24LP

9S

24

22.8

25.6

5

70

250

1.0

0.1

16.8

18.4

22.0

5

BZT52C36LP

9W

36

34.0

38.0

2

90

350

0.5

0.1

25.2

36.5

45.5

5

BZT52C39LP

9X

39

37.0

41.0

2

130

350

0.5

0.1

27.3

36.8

49.8

5

Notes:

4. Short duration pulse test used to minimize self-heating effect.

5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can

be found on our website at http://www.diodes.com.