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2SC5013 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC5013
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5013 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10518EJ01V0DS
3
2SC5013
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
250
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
2.0
1.0
1
0.5
0.1
0.2
510
20
50
f = 1 MHz
2
50
0.5
1.0
0
40
30
20
10
VCE = 6 V
30
20
10
28
12
0
46
10
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
160
140
120
100
80
60
40
20
IB =
200
180
500
200
1
100
10
20
50
550
VCE = 6 V
210
20
12
10
1
8
0
2
6
510
50
VCE = 6 V
f = 1 GHz
220
4
Remark The graphs indicate nominal characteristics.



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