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2SC5013 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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2SC5013 Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 9 page ![]() Data Sheet PU10518EJ01V0DS 4 2SC5013 Frequency f (GHz) MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT 0.1 50 0 10 0.5 1.0 VCE = 6 V IC = 10 mA 20 30 40 |S21e|2 MAG 5.0 1 12 0 8 510 20 50 VCE = 6 V f = 2 GHz 2 4 5 4 1 3 0 1 2 510 50 VCE = 6 V f = 2 GHz 220 Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ |
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