VMV3 datasheet(78/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-64

Revision 3

Table 2-95 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

1.5 V

LVCMOS

VIL

VIH

VOL

VOH

IOL IOH

IOSL

IOSH IIL1 IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmA mA

Max.

mA3

Max.

mA3 µA4 µA4

2 mA

–0.3

0.35 * VCCI 0.65 * VCCI 1.575

0.25 * VCCI 0.75 * VCCI 2

15 15

4 mA

–0.3

0.35 * VCCI 0.65 * VCCI 1.575

0.25 * VCCI 0.75 * VCCI 4

15 15

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 125°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-12 • AC Loading

Table 2-96 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V)

Input High (V)

Measuring Point* (V)

VREF (Typ) (V)

CLOAD (pF)

1.5

0.75

–

Note:

*Measuring point = Vtrip. See Table 2-28 on page 2-27 for a complete table of trip points.

Test Point

Enable Path

Datapath

5 pF

R = 1 k

R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

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