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IRLR2905ZPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLR2905ZPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRLR2905ZPbF IRLU2905ZPbF HEXFET® Power MOSFET VDSS = 55V RDS(on) = 13.5mΩ ID = 42A 10/1/10 www.irf.com 1 This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Description l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features D-Pak IRLR2905ZPbF I-Pak IRLU2905ZPbF HEXFET® is a registered trademark of International Rectifier. Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.38 RθJA Junction-to-Ambient (PCB mount) ij ––– 40 °C/W RθJA Junction-to-Ambient j ––– 110 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) 110 0.72 ± 16 Max. 60 43 240 42 85 57 See Fig.12a, 12b, 15, 16 PD - 95774B |
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