STF8N80K5 datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

DocID024419 Rev 2

3/15

STF8N80K5, STFI8N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 30

Drain current T

= 25 °C

(1)

Limited by package.

Drain current T

= 100 °C

(1)

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

(1)

TOT

Total dissipation at T

= 25 °C

(3)

Pulse width limited by T

Jmax.

Max current during repetitive or single

pulse avalanche

(4)

Starting T

= 25 °C, I

, V

= 50 V

Single pulse avalanche energy

(starting T

= 25 °C, I

, V

= 50 V)

114

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;T

=25 °C)

2500

dv/dt

(5)

≤ 6 A, di/dt ≤ 100 A/μs, V

DS(peak)

≤ V

(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(6)

≤ 640 V

MOSFET dv/dt ruggedness

V/ns

Operating junction temperature

-55 to 150

°C

stg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max.

°C/W

thj-amb

Thermal resistance junction-amb max.

62.5

°C/W

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