DocID024419 Rev 2

5/15

STF8N80K5, STFI8N80K5

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 400 V, I

D

= 3 A,

R

G

=4.7

Ω, V

GS

=10 V

(see Figure 18)

-12-

ns

t

r

Rise time

14

-

ns

t

d(off)

Turn-off delay time

32

-

ns

t

f

Fall time

20

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

6

A

I

SDM

Source-drain current (pulsed)

24

A

V

SD

(1)

1.

Pulsed: pulse duration = 300μs, duty cycle 1.5%

Forward on voltage

I

SD

= 6 A, V

GS

=0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 6 A, V

DD

= 60 V

di/dt = 100 A/μs,

(see Figure 17)

-

300

ns

Q

rr

Reverse recovery charge

3

μC

I

RRM

Reverse recovery current

20

A

t

rr

Reverse recovery time

I

SD

= 6 A, V

DD

= 60 V

di/dt=100 A/μs,

Tj=150 °C

(see Figure 17)

-

415

ns

Q

rr

Reverse recovery charge

-

3.8

μC

I

RRM

Reverse recovery current

-

18

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1mA, I

D

=0

30

-

-

V