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AM29LV128ML93RPCI Datasheet(PDF) 57 Page - Advanced Micro Devices |
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AM29LV128ML93RPCI Datasheet(HTML) 57 Page - Advanced Micro Devices |
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57 / 65 page ![]() September 9, 2003 Am29LV128MH/L 55 DA T A SH EET AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ V CC. Parameter Speed Options JEDEC Std. Description 93R 103, 103R 113, 113R 123, 123R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 45 ns t DVEH t DS Data Setup Time Min 45 ns t EHDX t DH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 7.5 µs Per Word Typ 15 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 6.25 µs Per Word Typ 12.5 µs Single Byte Word Program Operation (Note 2, 5) Byte Typ 60 µs Word Typ 60 µs Accelerated Single Byte Word Programming Operation (Note 2, 5) Byte Typ 54 µs Word Typ 54 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec |
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