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AM29LV128ML93RPCI Datasheet(PDF) 64 Page - Advanced Micro Devices |
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AM29LV128ML93RPCI Datasheet(HTML) 64 Page - Advanced Micro Devices |
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64 / 65 page ![]() 62 Am29LV128MH/L September 9, 2003 DA T A SH EET Byte/Word Program Command Sequence, Sector Erase Command Sequence, and Chip Erase Com- mand Sequence Noted that the SecSi Sector, autoselect, and CFI functions are unavailable when a program or erase operation is in progress. Common Flash Memory Interface (CFI) Changed wording in last sentence of third paragraph from, “...the autoselect mode.” to “...reading array data.” Changed CFI website address Revision B+3 (December 2, 2002) Global Added sector group protection throughout datasheet and added Table 4. Product Selector Guide Added V IOs to table and removed Note #2 Ordering Information Corrected typos in V IO ranges. Removed Notes #1 and 2. Figure 6. Program Suspend/Program Resume Change wait time to 15 µs. Operating Ranges Corrected typos in V IO ranges. Removed full voltage range. CMOS Compatible Changed V IH1 and VIH2 minimum to 1.9. Removed typos in notes. Read-Only Characteristics Added a 30 ns option to t PACC and tOE standard in ta- ble. Added note #3. Hardware Reset, Erase and Program Operations, Temporary Sector Unprotect, and Alternate CE# Controlled Erase and Program Operations Added Note. Revision B+4 (February 14, 2003) Distinctive Characteristics Corrected performance characteristics. Product Selector Guide Removed 93R speed option. Added note 2. Ordering Information Corrected Valid Combination to reflect speed option changes. Added Note. AC Characteristics Removed 93, 93R speed option. Added Note Input values in the t WHWH1 and tWHWH2 parameters in the Erase and Program Options table that were previ- ously TBD. Also added notes 5 and 6. Input values in the t WHWH1 and tWHWH2 parameters in the Alternate CE# Controlled Erase and Program Op- tions table that were previously TBD. Also added notes 5. Erase and Programming Performance Input values into table that were previously TBD. Added note 4. Revision C (May 16, 2003) Global Converted to full datasheet version. Modified SecSi Sector Flash Memory Region section to include ESN references. Changed data sheet title to Am29LV128MH/L. Erase and Programming Performance Input values into table that were previously TBD. Modified notes. Revision C + 1 (June 11, 2003) Product Selector Guide Added Note 2 to 113 and 123 speed grades Ordering Information Modified speed grade options available, changed speed grades mentioned in Note. AC Characteristics, Erase and Program Operations and Alternate CE# Controlled Erase and Program Operations Changed t WHWH1 Accelerated Effective Write Buffer Program Operations value |
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