STBB1PUR datasheet(7/21 Pages) STMICROELECTRONICS

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STBB1XX

Electrical characteristics

Doc ID 15474 Rev 5

7/21

Electrical characteristics

VIN = VINA = VEN = 3.6 V, CIN = 10 µF, COUT = 10 µF, L = 2.2 µH, TJ = - 40 to 85°C (unless

otherwise specified; typical values are referred to TA = 25 °C).

Table 6.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIN

Input voltage range

2.0

5.5

VUVLO

Under voltage lockout threshold

VINA rising

1.70

1.80

VINA falling

1.50

1.60

VFB

Feedback voltage

485

500

515

TJ = 25°C

490

500

510

VOUT

Output voltage range

1.2

5.5

ZFB

FB input impedance

No switching quiescent current

(VIN+VINA) (see Figure 3, 4)

FB = 0.7 V, VMODE = 0 V

160

250

µA

FB = 0.7 V, VMODE = VIN

600

750

Operating quiescent current

(VIN+VINA)

IOUT = 0 A, VOUT = 3.3 V,

VMODE = 0 V

200

µA

IOUT = 0 A, VOUT = 3.3 V,

VMODE = VIN

3.4

5.0

IQSHDN

Shutdown quiescent current

VEN = 0 V, VIN = 3.6 V

0.1

µA

freq

Oscillator frequency

1300

1500

1750

kHz

Frequency range for

synchronization

1300

2000

VEN

Enable input logic low

VIN = 2.2 V to 5.5 V

0.4

Enable input logic high

VIN = 2.2 V to 5.5 V

1.2

IEN

Enable pin current

VEN = 5.5 V

0.01

µA

VMODE/SYNC

MODE/SYNC input logic low

VIN = 2.2 V to 5.5 V

0.4

MODE/SYNC input logic high

VIN = 2.2 V to 5.5 V

1.2

IMODE/SYNC MODE/SYNC pin current

VMODE/SYNC = 5.5 V

0.01

µA

%VOUT

Line regulation

2.2 V < VIN < 5.5 V; IOUT = 1 mA

0.5

%VOUT

Load regulation

10 mA < IOUT < 1000 mA

ISWL

Switch current limitation

VIN = 3.3 V

1.6

2.3

2.6

ILKN

NMOS leakage current

VIN = 5.5 V

0.01

µA

ILKP

PMOS leakage current

0.01

µA

RDSon-N

NMOS switch on resistance

0.13

0.35

RDSon-P

PMOS switch on resistance

0.13

0.35

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