STF12NK65Z datasheet(3/12 Pages) STMICROELECTRONICS

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STF12NK65Z

Electrical ratings

Doc ID 18060 Rev 1

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.3

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

Derating factor

1.2

W/°C

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

dv/dt (2)

ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

3.6

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAR, VDD=50 V)

225

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