STF12NK65Z

Electrical characteristics

Doc ID 18060 Rev 1

5/12

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current

Source-drain current (pulsed)

-

10

38

A

A

(2)

2.

Pulse width limited by safe operating area

Forward on voltage

-1.6

V

Reverse recovery time

Reverse Recovery Charge

Reverse Recovery Current

di/dt = 100 A/µs

(see Figure 16)

-

436

3.4

15.4

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs

(see Figure 16)

-

518

4.1

15.9

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage

Igs=± 1mA (open drain)

30

-

V