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AAT9121 Datasheet(PDF) 2 Page - Advanced Analogic Technologies

Part # AAT9121
Description  30V N-Channel Power MOSFET
PDF  4 Pages
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Manufacturer  ANALOGICTECH [Advanced Analogic Technologies]
Direct Link  http://www.analogictech.com
Logo ANALOGICTECH - Advanced Analogic Technologies

AAT9121 Datasheet(HTML) 2 Page - Advanced Analogic Technologies

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Electrical Characteristics (T
J=25°C unless otherwise noted)
Note 2: Pulse test: Pulse Width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
30
V
RDS(ON)
Drain-Source ON-Resistance
2
VGS=10V, ID=8A
16
24
m
Ω
VGS=4.5V, ID=6.6A
28
35
ID(ON)
On-State Drain Current
2
VGS=10V ,VDS=5V (Pulsed)
24
A
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=250µA
1.0
V
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
±100
nA
IDSS
Drain Source Leakage Current
VGS=0V,VDS=30V
1
µA
VGS=0V,VDS=30V, TJ=55°C
5
gfs
Forward Transconductance
2
VDS=15V, ID=8A
15
S
Dynamic Characteristics
3
QG
Total Gate Charge
VDS=15V, ID=8A, VGS=5V
10.5
16
nC
QGT
Total Gate Charge
VDS=15V, ID=8A, VGS=10V
20.5
28
nC
QGS
Gate-Source Charge
VDS=15V, ID=8A, VGS=10V
3.8
nC
QGD
Gate-Drain Charge
VDS=15V, ID=8A, VGS=10V
2.9
nC
tD(ON)
Turn-ON Delay
VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω
915
ns
tR
Turn-ON Rise Time
VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω
12
20
ns
tD(OFF)
Turn-OFF Delay
VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω
38
55
ns
tF
Turn-OFF Fall Time
VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω
19
28
ns
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
2
VGS=0, IS=2.25A
1.1
V
IS
Continuous Diode Current
2
TA=25ºC
2.25
A
AAT9121
30V N-Channel Power MOSFET
2
9121.2001.12.0.9



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