IXTP1R4N100P datasheet(1/4 Pages) IXYS

Part #	IXTP1R4N100P

Description	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

1.4

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

3.0

A

I

A

T

C = 25°C

1.4

A

E

AS

T

C = 25°C

100

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C63

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

(TO-263)

10..65/2.2..14.6

N/lb.

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-252

0.35

g

TO-263

2.50

g

TO-220

3.00

g

DS99737B(08/11)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 50μA

2.5

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±50 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

μA

T

J = 125°C

150

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

11.8

Ω

PolarTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

IXTY1R4N100P

IXTA1R4N100P

IXTP1R4N100P

V

DSS

= 1000V

I

D25

= 1.4A

R

DS(on) ≤

≤≤≤≤ 11.8Ω

Ω

TO-252 (IXTY)

G

S

D (Tab)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXTA)

G

S

D (Tab)

G

D S

TO-220AB (IXTP)

D (Tab)

Features

International Standard Packages

Low R

DS(on) and QG

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

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