IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1R4N100P IXTA1R4N100P

IXTP1R4N100P

IXYS REF: T_1R4N100P (2A)4-03-08-A

Fig. 7. Input Admittance

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

3.03.5

4.04.5

5.05.5

6.06.5

25ºC

- 40ºC

Fig. 8. Transconductance

0

0.4

0.8

1.2

1.6

2

2.4

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

0.95

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

02

46

8

10

12

14

16

18

Fig. 11. Capacitance

1

10

100

1,000

0

5

10

15

20

25

30

35

40

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds