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CB2012T2R2M Datasheet(PDF) 3 Page - Linear Integrated Systems

Part # CB2012T2R2M
Description  Dual Monolithic 300mA Synchronous Step-Down Regulaor
PDF  16 Pages
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Manufacturer  LINEAR [Linear Integrated Systems]
Direct Link  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

CB2012T2R2M Datasheet(HTML) 3 Page - Linear Integrated Systems

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LTC3547
3
3547fa
VIN (V)
2.5
100
90
80
70
60
50
40
30
45
3547 G02
3
3.5
4.5
5.5
VOUT = 1.8V
IOUT = 0.1mA
IOUT = 1mA
IOUT = 10mA
IOUT = 100mA
IOUT = 300mA
TEMPERATURE (ºC)
–50
60
50
55
45
40
35
30
25
20
25
75
3547 G03
–25
0
50
100
RUN1 = RUN2 = VIN
ILOAD = 0A
VIN = 5.5V
VIN = 2.7V
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RDS(ON)
Channel 1 (Note 4)
Top Switch On-Resistance
Bottom Switch On-Resistance
Channel 2 (Note 4)
Top Switch On-Resistance
Bottom Switch On-Resistance
VIN = 3.6V, ISW = 100mA
VIN = 3.6V, ISW = 100mA
VIN = 3.6V, ISW = 100mA
VIN = 3.6V, ISW = 100mA
0.8
0.75
0.8
0.75
1.05
1.05
1.05
1.05
Ω
Ω
Ω
Ω
ISW(LKG)
Switch Leakage Current
VIN = 5V, VRUN = 0V
0.01
1
µA
tSOFTSTART
Soft-Start Time
VFB From 10% to 90% Full-Scale
0.450
0.650
0.850
ms
VRUN
RUN Threshold High
0.4
1
1.2
V
IRUN
RUN Leakage Current
0.01
1
µA
VBURST
Output Ripple in Burst Mode Operation
VOUT = 1.5V, COUT = 4.7µF
20
mVP-P
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3547E is guaranteed to meet specified performance
from 0°C to 85°C. Specifications over the –40°C and 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 4: The DFN switch on-resistance is guaranteed by correlation to
wafer level measurements.
Note 5: Guaranteed by long term current density limitations.
Note 6: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Burst Mode Operation
Efficiency vs Input Voltage
Supply Current vs Temperature
TYPICAL PERFOR A CE CHARACTERISTICS
2.5
µs/DIV
VOUT
50mV/DIV
IL
50mA/DIV
SW, AC
COUPLED
5V/DIV
3547 G01
VIN = 3.6V
VOUT = 1.8V
ILOAD = 20mA



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