◎ SEMIHOW REV.1.1 May 2007

FEATURES

HSC106D

Sensitive Gate Silicon Controlled Rectifier

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control ; process

and remote control, and warning systems where reliability of

operation is important.

General Description

V

DRM

= 400 V

I

T(RMS)

= 4.0A

1.Cathode

Symbol

2.Anode

3.Gate

Absolute Maximum Ratings

(

Symbol

Parameter

Value

Units

Repetitive Peak Off-State Voltage (Forward)

400

V

Repetitive Peak Off-State Voltage (Reverse)

400

V

On-State R.M.S Current

4.0

A

On-State Average Current

2.55

A

Surge On-State Current (1/2 Cycle, 60Hz, Sine

Wave, Non-repetitive, Tj = 110 °C)

20

A

I

Circuit Fusing Considerations (t=8.3mS)

1.65

A

Forward Peak Gate Power Dissipation

(Pulse Width ≤1.0μsec,Tc=80℃)

0.5

W

Forward Average Gate Power Dissipation

(Pulse Width ≤1.0μsec, Tc=80℃)

0.1

W

Reverse Peak Gate Voltage

6.0

V

Forward Peak Gate Current

(Pulse Width ≤1.0 μsec, Tc=80℃)

0.2

A

Storage Temperature Range

-40 to +150

℃

Operating Junction Temperature

-40 to +110

℃

HSC106D

1

2

3