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HSC106D Datasheet(PDF) 2 Page - SemiHow Co.,Ltd.

Part # HSC106D
Description  Sensitive Gate Silicon Controlled Rectifier
PDF  4 Pages
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HSC106D Datasheet(HTML) 2 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.1.1 May 2007
Electrical Characteristics (Ta=25℃)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IGT
Gate Trigger Current
(1)
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
15
35
200
500
uA
VGT
Gate Trigger Voltage
(1)
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
0.4
0.5
0.6
0.75
0.8
1.0
V
VGD
Non Trigger Gate Voltage
VAK= 12VDC, RL= 100Ω, TC= 110℃
0.2
V
IH
Holding Current
VAK= 12VDC, Gate open,
Initiating current=20mA, TJ= 25℃
TJ= -40℃
TJ = 110℃
0.19
0.33
0.07
3.0
6.0
2.0
mA
IL
Latching Current
VAK= 12VDC, IG= 20mA,
Gate Open,
TJ= 25℃
TJ= 110℃
0.2
0.35
5.0
mA
VTM
Peak Forward On-State
Voltage
(2)
IFM=1A
2.2
V
IDRM
IRRM
Repetitive or Reverse
Peak Blocking Current
VAK= VDRM or VRRM,
TC= 25℃
TC= 110℃
10
100
uA
uA
dv/dt
Critical Rate of Rise
Off state Voltage
VAK = VDRM, Exponential waveform,
RGK= 1㏀, Gate open,
TJ=110℃
8.0
V/uS
(1) R
GK Current is not included in measurement
(2) Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2%
℃/W
3.0
Junction to Case
Thermal Resistance
RTH(J-C)
℃
260
Maximum Lead Temperature for Soldering Purpose 1/8
”, from case
for 10second
TL
℃/W
75
Junction to Ambient
Thermal Resistance
RTH(J-A)
Units
Max
Typ
Min
Conditions
Parameter
Symbol
Thermal Characteristics



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