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HTP16A80H Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTP16A80H Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 T2 T1 G FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (I T(RMS) = 16A) Gate Trigger Current : 35mA High commutation capability. Applications General purpose of AC switching, heating control, motor control, etc General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application HTP16A60H/HTP16A80H 3 Quadrants Standard TRIAC V DRM = 600V/800V I T(RMS) = 16 A I TSM = 168 A I GT = 35mA Symbol Absolute Maximum Ratings (T J=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit HTP16A60H HTP16A80H V DRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 800 V V RRM Repetitive Peak Reverse Voltage 600 800 V I T(AV) Average On-State Current Full sine wave, T C = 81 oC 14.4 A I T(RMS) R.M.S. On-State Current 16 A I TSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 160/168 A I2t Fusing Current t = 10ms 128 A2S P GM Forward Peak Gate Power Dissipation T J = 125 °C 5 W P G(AV) Forward Average Gate Power Dissipation T J = 125 °C, over any 20ms 1 W I FGM Forward Peak Gate Current T J = 125 °C, pulse width ≤ 20us 2 A V RGM Reverse Peak Gate Voltage T J = 125 °C, pulse width ≤ 20us 10 V T J Operating Junction Temperature -40~+150 oC T STG Storage Temperature -40~+150 oC TO-220 |
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