AUIRFS3607 datasheet(2/13 Pages) IRF

2 / 13 page

AUIRFS/SL3607

www.irf.com

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application

note #AN-994.

Rθ is measured at TJ approximately 90°C.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.12mH,RG = 25Ω,

IAS = 46A, VGS =10V. Part not recommended for use

above this value.

ISD ≤ 46A, di/dt ≤ 1920A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

––– 0.096 –––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

7.34

9.0

mΩ

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

gfs

Forward Transconductance

115

–––

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Total Gate Charge

–––

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

RG(int)

Internal Gate Resistance

–––

0.55

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

110

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

3070

–––

Coss

Output Capacitance

–––

280

–––

Crss

Reverse Transfer Capacitance

–––

130

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)

–––

380

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)

–––

610

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 64V,

–––

TJ = 125°C

IF = 46A

Qrr

Reverse Recovery Charge

–––

TJ = 25°C

di/dt = 100A/μs

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

1.9

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

–––

310

μA

ID = 46A

RG = 6.8Ω

VGS = 10V f

VDD = 49V

ID = 46A, VDS =0V, VGS = 10V

TJ = 25°C, IS = 46A, VGS = 0V f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 46A f

VDS = VGS, ID = 100μA

VDS = 75V, VGS = 0V

VDS = 60V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS = 38V

Conditions

VGS = 10V f

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V h

VGS = 0V, VDS = 0V to 60V g

Conditions

VDS = 50V, ID = 46A

ID = 46A

VGS = 20V

VGS = -20V

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