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1

AUIRFS3607

AUIRFSL3607

S

D

G

75V

7.34m

:

max.

9.0m:

80A

GD

S

Gate

Drain

Source

AUIRFS3607

TO-262

AUIRFSL3607

S

D

G

D

D

S

G

Specifically designed for Automotive applications, this

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use in

Automotiveapplicationsandawidevarietyofotherapplications.

Description

Features

l

Advanced Process Technology

l

Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free, RoHS Compliant

l

Automotive Qualified *

AUTOMOTIVE GRADE

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.

Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

is 25°C, unless otherwise specified.

*Qualification standards can be found at http://www.irf.com/

PD - 96402A

Parameter

Units

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

™

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

dv/dt

Peak Diode Recovery

e

V/ns

Single Pulse Avalanche Energy d

mJ

Avalanche CurrentÙ

A

Repetitive Avalanche Energy f

mJ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

j

–––

1.045

–––

40

Max.

80

56

310

0.96

300(1.6mm from case)

°C

A

°C/W

120

46

14

140

27

-55 to + 175

± 20