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STP31N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP31N65M5
Description  N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
PDF  25 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP31N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID022848 Rev 3
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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-247
TO-220FP
I2PakFP
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
22
22
(1)
1.
Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C
13.9
13.9
(1)
A
I
DM
(1)
Drain current (pulsed)
88
88
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
150
30
W
dv/dt
(2)
2.
I
SD
≤ 22 A, di/dt ≤ 400 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
=400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
3.
V
DS ≤
480 V
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220FP
I2PakFP
TO-220
TO-247
R
thj-case
Thermal resistance junction-
case max
0.83
4.17
0.83
°C/W
R
thj-pcb
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-
pcb max
30
°C/W
R
thj-amb
Thermal resistance junction-
ambient max
62.5
50
°C/W



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