DocID022848 Rev 3

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

650

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 650 V

V

DS

= 650 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 25 V

± 100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

345

V

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 11 A

0.124

0.148

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

C

oss

C

rss

Input capacitance

Output capacitance

Reverse transfer

capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-

1865

45

4.2

-

pF

pF

pF

C

o(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as C

oss

when

V

DS

increases from 0 to 80% V

DSS

Equivalent

capacitance time

related

V

DS

= 0 to 520 V, V

GS

= 0

-146

-

pF

C

o(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent

capacitance energy

related

-43

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

2.8

-

Ω

Q

g

Q

gs

Q

gd

Total gate charge

Gate-source charge

Gate-drain charge

V

DD

= 520 V, I

D

= 11 A,

V

GS

= 10 V

(see

Figure 20)

-

45

11.5

20

-

nC

nC

nC