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CEG9926 Datasheet(PDF) 2 Page - Chino-Excel Technology

Part # CEG9926
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEG9926 Datasheet(HTML) 2 Page - Chino-Excel Technology

  CEG9926 Datasheet HTML 1Page - Chino-Excel Technology CEG9926 Datasheet HTML 2Page - Chino-Excel Technology CEG9926 Datasheet HTML 3Page - Chino-Excel Technology CEG9926 Datasheet HTML 4Page - Chino-Excel Technology CEG9926 Datasheet HTML 5Page - Chino-Excel Technology  
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ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250
µA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
µA
Gate-Body Leakage
IGSS
VGS= 8V, VDS=0V
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250
µA
0.5
1.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=4.5A
30
m
Ω
40
m
Ω
On-State Drain Current
ID(ON)
VDS=5V, VGS=4.5V
10
A
10
S
Forward Transconductance
FS
g
VDS=10V, ID=4.5A
DYNAMIC CHARACTERISTICS
C
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS =8V, VGS =0V
f =1.0MHZ
500
P
F
300
P
F
P
F
140
SWITCHING CHARACTERISTICS
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
Fall time
VDD =10V,
ID =1A,
VGEN = 4.5V,
RGEN = 6
Ω
20
40
ns
ns
ns
ns
18
40
60
108
56
28
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =10V, ID =4.5A,
VGS =4.5V
10
15
nC
nC
nC
2.3
2.9
C
9-18
32
24
CEG9926
9
VGS=2.5V, ID=3.5A
VGS=4.0V, ID=5A
23
m
Ω



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