STW30NM50N datasheet(1/18 Pages) STMICROELECTRONICS

Part #	STW30NM50N

Description	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 18 page

September 2008

Rev 2

1/18

18

STB30NM50N,STI30NM50N,STF30NM50N

STP30NM50N, STW30NM50N

N-channel 500 V, 0.090

Ω, 27 A MDmesh™ II Power MOSFET

D2PAK, I2PAK, TO-220FP, TO-220, TO-247

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices is designed using the

second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a

new vertical structure to the Company’s strip

layout to yield one of the world’s lowest on-

resistance and gate charge. It is therefore suitable

for the most demanding high efficiency

converters.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STB30NM50N

550 V

< 0.115

Ω

27 A

STI30NM50N

550 V

< 0.115

Ω

27 A

STF30NM50N

550 V

< 0.115

Ω

27 A(1)

1.

Limited only by maximum temperature allowed

STP30NM50N

550 V

< 0.115

Ω

27 A

STW30NM50N

550 V

< 0.115

Ω

27 A

1

3

1

2

3

1

2

3

1

2

3

1

2

3

D²PAK

I²PAK

TO-220

TO-247

TO-220FP

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB30NM50N

30NM50N

D²PAK

Tape and reel

STI30NM50N

30NM50N

I²PAK

Tube

STF30NM50N

30NM50N

TO-220FP

Tube

STP30NM50N

30NM50N

TO-220

Tube

STW30NM50N

30NM50N

TO-247

Tube

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- Obsolete

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