STW30NM50N datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STW30NM50N

Description	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 18 page

STB/I/F/P/W30NM50N

Electrical characteristics

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min. Typ.

Max Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 250 V, ID = 13.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

115

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

108

VSD

(2)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 27 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 27 A, di/dt = 100 A/µs

VDD= 100 V Tj = 25°C

(see Figure 20)

480

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 27 A, di/dt = 100 A/µs

VDD= 100 V Tj = 150°C

(see Figure 20)

540

µC

Obsolete

Product(s)

- Obsolete

Product(s)

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