STB170NF04 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STB170NF04

4/15

Doc ID 15591 Rev 2

Electrical characteristics

(TCASE=25°C unless otherwise specified).

Table 4.

On/off

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 40 V,

VDS = 40 V, Tc=125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 40 A

4.4

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID = 40 A

-90

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

5345

1400

430

9000

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=20 V, ID = 80 A

VGS =10 V

(see Figure 14)

117

170

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD= 20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

td(off)

Turn-off delay time

Fall time

VDD= 20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

100

STB170NF04 Datasheet(PDF) 4 Page - STMicroelectronics

STB170NF04 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL