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SSN3134K Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSN3134K
Description  N-Channel Enhancement MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSN3134K Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSN3134K
0.75 A, 20 V, RDS(ON) 380 m
N-Channel Enhancement MOSFET
13-Mar-2014 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Low voltage drive makes this device ideal for
portable equipment
APPLICATION
Interfacing
Switching
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-723
8K
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±
12
V
Continuous Drain Current
1
ID
0.75
A
Pulsed Drain Current (tp=10μs)
IDM
1.8
A
Total Power Dissipation
1
PD
150
mW
Thermal Resistance Junction-ambient
1
RθJA
833
°C / W
Lead Temperature for Soldering Purposes
(1/8” from case for 10S)
TL
260
°C
Operating Junction & Storage Temperature Range
TJ, TSTG
150, -55~150
°C
Notes:
1.
Surface mounted on FR4 board using the minimum recommended pad size
SOT-723
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.150
1.250
F
0.170
0.270
B
0.750
0.850
G
0.270
0.370
C
-
0.500
H
0
0.050
D
1.150
1.250
I
-
0.150
E
0.800TYP.
KF
 GATE
 SOURCE
 DRAIN
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