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SSP7492N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSP7492N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSP7492N 6.2A, 150V, RDS(ON) 88 m N-Channel Enhancement MOSFET 18-Sep-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 V TA=25°C 6.2 Continuous Drain Current 1 TA=70°C ID 5 A Pulsed Drain Current 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 IS 6.7 A TA=25°C 5 Power Dissipation 1 TA=70°C PD 3.2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Data t≦10 sec 25 Maximum Junction to Ambient 1 Steady State RθJA 65 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.85 1.00 θ 0 ° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.30 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.55 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.2 BCS. L 0.40 0.70 SOP-8PP |
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