SSP7492N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP7492N

6.2A, 150V, RDS(ON) 88 m

N-Channel Enhancement MOSFET

18-Sep-2013 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

Gate-Body Leakage

IGSS

100

VDS=0, VGS= ±20V

VDS=120V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS=120V, VGS=0,TJ=55°C

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

VGS=10V, ID=5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=5.5V, ID=4A

Forward Transconductance

gFS

VDS=15V,,ID=5A

Diode Forward Voltage

VSD

0.75

IS=3.4A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

7.4

Gate-Drain Charge

Qgd

ID=5A

VDS=75V

VGS=5.5V

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

Fall Time

ID=5A, VDS=75V

VGEN=10V

RL=15Ω, RGEN=6Ω

Input Capacitance

Ciss

2599

Output Capacitance

Coss

167

Reverse Transfer Capacitance

Crss

VDS=15V, VGS=0, f=1MHz

Notes:

Pulse test：PW≦300μs duty cycle≦2%.

Guaranteed by design, not subject to production testing.

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