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MASW4030G Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # MASW4030G
Description  GaAs SPDT Switch
PDF  4 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW4030G Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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1
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
MASW4030G
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• Absorbtive or Reflective
• Excellent Intermodulation Products
• Excellent Temperature Stability
• Fast Switching Speed: 3 ns Typical
• Ultra Low DC Power Consumption
• Independent Bias Control
Description
The
MASW4030G
is
an
SPDT
absorptive
or
reflective GaAs MESFET MMIC. This part combines
small
size,
low
insertion
loss
and
power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4030G is fabricated using a mature
1-micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.
Ordering Information
Part Number
Package
MASW4030G
DIE
Bond Pad Dimensions
Schematic
Pad Layout
G1
RF
G1
RF1
RF2
B
A
B
C
A
C
G2
G2
G1
RF
G1
RF1
RF2
B
A
B
C
A
C
G1
RF
G1
RF1
RF2
B
A
B
C
A
C
G2
G2
Control Value (A or B)
-8.5 Vdc
Max Input RF Power
+34.0 dBm
(500 MHz - 4 GHz)
Storage Temperature
-65°C to +175°C
Operating Temperature
+175°C
Parameter
Absolute Maximum
Absolute Maximum Rating
1,2
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
Bond Pad
Dimensions - Inches (mm)
G1
0.004 x 0.008 (0.100 x 0.200)
RF1, RF2
0.004 x 0.008 (0.100 x 0.200)
T
0.0065 x 0.13 (0.165 x 0.330)
A, B, Ac, Bc, G2
0.004 x 0.004 (0.100 x 0.100)
RF
0.008 x 0.006 (0.200 x 0.150)
T
T
Die Size - Inches (mm)
0.042 x 0.040 x 0.010 (1.065 x 1.015 x 0.25)


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