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STP75N75F4 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP75N75F4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STP75N75F4 Electrical ratings Doc ID 023484 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 75 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 78 A ID Drain current (continuous) at TC = 100 °C 55 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 312 A PTOT Total dissipation at TC = 25 °C 150 W Derating factor 1 W/°C EAS (2) 2. Starting Tj = 25 °C, ID= 35 A, VDD= 50 V Single pulse avalanche energy 185 mJ Tstg Storage temperature – 55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W |
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