K246 datasheet(2/8 Pages) NEC

2 / 8 page

2SK2461

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-Resistance

RDS(on)1

VGS = 10 V, ID = 10 A

Drain to Source On-Resistance

RDS(on)2

100

VGS = 4 V, ID = 10 A

Gate to Source Cutoff Voltage

VGS(off)

1.0

1.7

2.0

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 10 A

Drain Leakage Current

IDSS

VDS = 100 V, VGS = 0

Gate to Source Leakage Current

IGSS

±10

VGS =

±20 V, VDS = 0

Input Capacitance

Ciss

1400

VDS = 10 V

Output Capacitance

Coss

470

VGS = 0

Reverse Transfer Capacitance

Crss

150

f = 1 MHz

Turn-On Delay Time

td(on)

ID = 10 A

Rise Time

110

VGS(on) = 10 V

Turn-Off Delay Time

td(off)

140

VDD = 50 V

Fall Time

110

RG = 10

Ω

Total Gate Charge

ID = 20 A

Gate to Source Charge

QGS

4.9

VDD = 80 V

Gate to Drain Charge

QGD

VGS = 10 V

Body Diode Forward Voltage

VF(S-D)

1.1

IF = 20 A, VGS = 0

Reverse Recovery Time

trr

170

IF = 20 A, VGS = 0

Reverse Recovery Charge

Qrr

770

di/dt = 100 A/

µs

Test Circuit 3 Gate Charge

VGS = 20

→ 0 V

PG.

RG = 25

Ω

D.U.T.

VDD

Test Circuit 1 Avalanche Capability

PG.

RG = 10

Ω

D.U.T.

VDD

Test Circuit 2 Switching Time

PG.

IG = 2 mA

Ω

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

t = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

10 %

VGS (on)

ton

toff

td (on)

td (off)

UNIT

Ω

µA

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

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