STL8DN6LF3 datasheet(1/18 Pages) STMICROELECTRONICS

Part #	STL8DN6LF3

Description	Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

February 2014

DocID022261 Rev 5

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STL8DN6LF3

Automotive-grade dual N-channel 60 V, 22.5 m

Ω typ., 7.8 A STripFET™ III

Power MOSFET in a PowerFLAT™ 5x6 double island package

Datasheet — production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Logic level V

GS(th)

• 175 °C junction temperature

• 100% avalanche rated

• Wettable flank package

Applications

• Switching applications

Description

This device is an N-channel enhancement mode

Power MOSFET produced using

STMicroelectronics’ STripFET™ III technology,

which is specifically designed to minimize on-

resistance and gate charge to provide superior

switching performance.

PowerFLAT™ 5x6

1

2

3

4

double island

Order code

VDS

RDS(on) max

ID

STL8DN6LF3

60 V

30 m

Ω

7.8 A

Table 1. Device summary

Order code

Marking

Packages(1)

Packaging

STL8DN6LF3

8DN6LF3

PowerFLAT™ 5x6 double island

Tape and reel

1.

For wettable flank option, please contact ST sale offices

www.st.com

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STL8DN6LF3 Datasheet(PDF) 1 Page - STMicroelectronics

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