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STL8DN6LF3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL8DN6LF3
Description  Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL8DN6LF3 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID022261 Rev 5
3/18
STL8DN6LF3
Electrical ratings
18
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
60
V
V
GS
Gate-source voltage
±20
V
I
D
(1),(2)
1.
Specified by design. Not subject to production test.
2.
Current is limited by bonding, with an R
thJC
= 2.3 °C/W the chip is able to carry 30 A at 25 °C.
Drain current (continuous) at T
C
= 25 °C
20
A
I
D
Drain current (continuous) at T
C
= 100 °C
20
A
I
D
(4)
Drain current (continuous) at T
pcb
= 25 °C
7.8
A
I
D
(4)
Drain current (continuous) at T
pcb
=100 °C
5.5
A
I
DM
(3),(4)
3.
Pulse width limited by safe operating area
4.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Drain current (pulsed)
31.2
A
P
TOT
Total dissipation at T
C
= 25°C
65
W
P
TOT
(4)
Total dissipation at T
pcb
= 25°C
4.3
W
I
AV
Not-repetitive avalanche current
7.8
A
E
AS
(5)
5.
Starting T
J
= 25 °C, I
D
= 8 A, V
DD
= 25 V, per channel, 100% tested.
Single pulse avalanche energy
190
mJ
T
J
Operating junction temperature
-55 to 175
°C
T
stg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
2.3
°C/W
R
thj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
35
°C/W



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