IXFX64N50Q3 datasheet(1/6 Pages) IXYS

Part #	IXFX64N50Q3

Description	N-Channel Enhancement Mode

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

64

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

160

A

I

A

T

C = 25°C

64

A

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

50

V/ns

P

D

T

C = 25°C

1000

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-264)

1.13/10

Nm/lb.in.

F

C

Mounting Force

(PLUS247)

20..120 /4.5..27

N/lb.

Weight

TO-264

10

g

PLUS247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 4mA

3.5

6.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

μA

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

85 m

Ω

HiperFETTM

Power MOSFETs

Q3-Class

IXFK64N50Q3

IXFX64N50Q3

V

DSS

=

500V

I

D25

=

64A

R

DS(on) ≤

≤≤≤≤

85m

Ω

t

rr

≤≤≤≤≤

250ns

DS100346(06/11)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

G = Gate

D

= Drain

S = Source

Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

Features

Low Intrinsic Gate Resistance

Low Package Inductance

Fast Intrinsic Rectifier

Low R

DS(on) and QG

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

Temperature and Lighting Controls

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