2N7002KB datasheet(1/7 Pages) SILIKRON

Part #	2N7002KB

Description	Main Product Characteristics

PDF	7 Pages

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Manufacturer	SILIKRON [Silikron Semiconductor Co.,LTD.]

Direct Link	http://www.silikron.com

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1 / 7 page

2N7002KB

©Silikron Semiconductor CO., LTD.

2012.04.20

Version: 1.0

page 1 of 7

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

0.3

A

IDM

Pulsed Drain Current②

1.2

PD @TC = 25°C

Power Dissipation③

0.63

W

VDS

Drain-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-ambient (

④

—

200

℃/W

VDSS

60V

RDS(on)

2

Ω(max.)

ID

0.3A

SOT-23

Schematic diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



ESD Rating：1000V HBM



150℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

Marking and pin

Assignment

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